In response to the growing global demand for renewable energy, particularly in distributed generation and residential solar storage systems, the microinverter market has expanded significantly, now reaching a billion-dollar scale. As a crucial component in solar energy systems, microinverters enable efficient energy conversion and grid connectivity, advancing green energy adoption.

Geehy introduces the G32R501 800W Dual MPPT Microinverter Solution, a high-efficiency, intelligent production-ready solution designed to support the global energy transition. Leveraging the G32R501 real-time MCU, this solution enables digital control of photovoltaic (PV) microinverters, featuring dual independent Maximum Power Point Tracking (MPPT) inputs, an 800W rated power output, Phase-Locked Loop (PLL) grid synchronization, and seamless grid-tied operation.

G32R501 800W Dual MPPT Microinverter Solution Overview

The Geehy G32R501-based microinverter solution integrates all essential functions for microinverter applications. The G32R501 real-time MCU manages MPPT tracking, grid synchronization (SPLL), primary-side current tracking of the flyback converter, sinusoidal voltage regulation, and external USART communication. It also controls two power units for isolated flyback conversion and output commutation.

Solution Features

· Utilizes the G32R501 real-time MCU for full digital control of flyback and commutation power units.
· Maximum photovoltaic input voltage: 60V; MPPT voltage range: 16V–60V; startup voltage: 22V; dual MPPT channels; maximum input current: 14A.
· Supports grid voltage range of AC 180V–275V and frequency of 45Hz–55Hz.
· Rated output power: 800W; rated output current: 3.5A.
· Full-load power factor >0.99; peak efficiency: 94.0%.
· Nominal MPPT efficiency: 99.80%.
· Operating temperature: -40℃ to 60℃, natural cooling.

Solution Functions

This solution incorporates a flyback power unit and a commutation power unit, using the G32R501 real-time MCU to enable photovoltaic grid connection output.

  • The flyback power unit consists of two identical flyback circuits operating in a two-phase interleaved parallel mode to optimize power transmission and MPPT efficiency. It ensures precise primary-side current regulation and synchronized sinusoidal grid voltage tracking for high power factor output.

  • The commutation power unit uses an H-bridge with two bridge arms, each containing a MOSFET and a thyristor in series. A PLL generates the flyback unit’s angle and controls the four switches for sinusoidal current output.

  • The dual MPPT channels operate independently, mitigating power loss caused by mismatched PV modules (for example, shading and varying irradiation angles), thereby enhancing energy yield by at least 5%.

  • Ensures system stability and efficiency even in the scenario of individual module failure or inverter malfunction.

  • Enables flexible installation for PV modules with different orientations, slopes, and power ratings, facilitating the integration of both new and existing equipment.

G32R501 Chip Features

· High Computing Power: With a 250 MHz operating frequency, SRAM can be flexibly configured as zero-wait-state ITCM and DTCM. The Arm® Cortex®-M52 core supports ACI functionality, allowing direct integration of custom instructions, and significantly enhancing computational performance for power applications like filters, compensators, and PLLs.
· Advanced Control Peripherals: Equipped with 16 PWM channels supporting high-resolution PWM output (typical resolution: 151 ps). Additionally, it features a valley switching module, meeting microinverter requirements for valley switching and peak current shutdown.
· Enhanced Analog Peripherals: Includes 7 comparator units with integrated dual 12-bit DACs, offering blanking and filtering functions for precise peak current shutdown and valley switching.
· High-speed ADCs: Features three 3.45 MSPS 12-bit ADCs with 31 external channels, enabling synchronized, low-latency sampling for improved MPPT tracking performance.
· Industrial-grade Reliability: Operates from -40°C to 125°C, ensuring robustness in complex industrial environments and high electromagnetic interference tolerance.

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